TCAD Simulation Models, Parameters, and Methodologies for β-Ga2O3 Power Devices

Abstract

β-Ga2O3 is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to Silicon Carbide and Gallium Nitride. Since β-Ga2O3 technology is still not mature, experimental study of β-Ga2O3 is difficult and expensive. Technology-Computer-Aided Design (TCAD) is thus a cost-effective way to study the potentials and limitations of β-Ga2O3 devices. In this paper, TCAD parameters calibrated to experiments are presented. They are used to perform the simulations in heterojunction p-NiO/n-Ga2O3 diode, Schottky diode, and normally-off Ga2O3 vertical FinFET. Besides the current-voltage (I-V) simulations, breakdown, capacitance-voltage (C-V), and short-circuit ruggedness simulations with robust setups are discussed. TCAD Sentaurus is used in the simulations but the methodologies can be applied in other simulators easily. This paves the road to performing a holistic study of β-Ga2O3 devices using TCAD.