Study of the mechanism of single event burnout in lateral depletion-mode Ga2O3 MOSFET devices via TCAD simulation-Reference-Cited by-同舟云学术

Study of the mechanism of single event burnout in lateral depletion-mode Ga2O3 MOSFET devices via TCAD simulation

Published:2024-04-08 Issue:14 Volume:135 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Wang Kejia¹^ORCID,Wang Zujun²^ORCID,Cao Rongxing³⁴^ORCID,Liu Hanxun³^ORCID,Chang Wenjing¹^ORCID,Zhao Lin⁵,Mei Bo⁶,Lv He⁶,Zeng Xianghua¹³^ORCID,Xue Yuxiong³⁴

Affiliation:

1. College of Physics Science and Technology, Yangzhou University 1 , Yangzhou 225002, China

2. State Key Laboratory of Intense Pulse Radiation Simulation and Effect, Northwest Institute of Nuclear Technology 2 , Xi’an 710024, China

3. College of Electrical, Energy and Power Engineering, Yangzhou University 3 , Yangzhou 225127, China

4. Innovation Center for Radiation Application 4 , Beijing 102413, China

5. Institute of Special Environments Physical Sciences, Harbin Institute of Technology 5 , Shenzhen 518055, China

6. China Academy of Space Technology 6 , Beijing 100029, China

Abstract

This study investigates the sensitive region and safe operation voltage of single-event burnout (SEB) in lateral depletion-mode Ga2O3 MOSFET devices via technology computer aided design simulation. Based on the distribution of the electric field, carrier concentration, and electron current density when SEB occurs, the radiation damage mechanism of SEB is proposed. The mechanism of SEB in Ga2O3 MOSFET was revealed to be the result of a unique structure without a PN junction within it, which possesses gate control ability and exerts a significant influence on the conduction of the depletion region.

Funder

National Natural Science Foundation of China

Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and effect

Postgraduate Research and Practice Innovation Program of Jiangsu Province

Innovative Science and Technology Platform Project of Cooperation beteen Yangzhou City and Yangzhou University, China

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0184704/19873152/145702_1_5.0184704.pdf

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