Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS
2. Experimental electronic structure of In2O3and Ga2O3
3. Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy
4. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
5. Intrinsic electron mobility limits inβ-Ga2O3
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