Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition-Reference-Cited by-同舟云学术

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Published:2017-07-03 Issue:1 Volume:111 Page:012103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Leedy Kevin D.¹,Chabak Kelson D.¹,Vasilyev Vladimir¹,Look David C.¹²,Boeckl John J.³,Brown Jeff L.⁴,Tetlak Stephen E.¹,Green Andrew J.⁴,Moser Neil A.⁵,Crespo Antonio¹,Thomson Darren B.¹,Fitch Robert C.¹,McCandless Jonathan P.⁴^ORCID,Jessen Gregg H.¹

Affiliation:

1. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA

2. Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, USA

3. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433, USA

4. KBRwyle, Beavercreek, Ohio 45431, USA

5. George Mason University, Fairfax, Virginia 22030, USA

Funder

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4991363

Reference27 articles.

1. On the bulk β-Ga2O3 single crystals grown by the Czochralski method

2. Czochralski growth and characterization of β-Ga2O3 single crystals

3. Czochralski grown Ga2O3 crystals

4. Large-size β-Ga2O3 single crystals and wafers

5. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

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