Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
2. Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs
3. The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors
4. Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs
5. Improvement of AlGaN∕GaN high electron mobility transistor structures byin situdeposition of a Si3N4 surface layer
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1. An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics;ECS Journal of Solid State Science and Technology;2024-01-01
2. Analysis of High Frequency AlGaN/GaN-Based HEMT for Resistive Load Inverter;Lecture Notes in Electrical Engineering;2024
3. Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT;Key Engineering Materials;2023-05-31
4. Analysis of AlGaN/GaN Based HEMT for Millimeter-Wave Applications;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26
5. Characterization of AlGaN / GaN based HEMT for low noise and high frequency application;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-06-30
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