The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862669
Reference18 articles.
1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
2. High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance
3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
4. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
5. Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
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