Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT

Published:2023-05-31 Issue: Volume:947 Page:3-8
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Hamid Mohamad Hasnan Abdull¹,Mohd Asri Rahil Izzati¹,Nuzaihan Mohammad²,Inaba Masafumi³,Hassan Zainuriah¹,Kawarada Hiroshi⁴,Falina Shaili¹,Syamsul Mohd¹

Affiliation:

1. Universiti Sains Malaysia

2. Universiti Malaysia Perlis (UniMAP)

3. Kyushu University

4. WasedaUniversity

Abstract

Metal organic chemical vapor deposition (MOCVD) was used to grow AlGaN/GaN HEMT on a sapphire substrate with a 3.0 nm GaN cap and a sample without a GaN cap. High resolution X-ray diffraction (HRXRD) was utilized to investigate the structural characteristics of the materials. The relationship between the electrical properties and two-dimensional electron gas (2DEG) I-V and Hall Effect measurement. The I-V measurement was used to investigate the resistance properties of AlGaN/GaN heterostructures. Hall Effect measurement was used to quantify electron mobility and sheet carrier concentration in both samples. The sample with a 3.0 nm GaN cap exhibited excellent electrical properties with 436.8 Ω/sq sheet resistivity and possessed a high value of sheet carrier concentration 3.46E+14 per cm2.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.947.3.pdf

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