Analysis of AlGaN/GaN Based HEMT for Millimeter-Wave Applications
Author:
Affiliation:
1. BIT, Mesra,Dept. of ECE,Ranchi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032879.pdf?arnumber=10032879
Reference29 articles.
1. Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates
2. High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
3. Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier;sinha;Microsystem Technologies,2019
4. Characterization of InP-based pseudomorphic HEMT with T-gate;dubey;Microsystem Technologies,2019
5. AlNGaN HEMT T- gate Optimal Design
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Source, Drain and Gate Field Plated AlGaN/GaN Based HEMT for High Breakdown Voltage;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
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