Improvement of AlGaN∕GaN high electron mobility transistor structures byin situdeposition of a Si3N4 surface layer-Reference-Cited by-同舟云学术

Improvement of AlGaN∕GaN high electron mobility transistor structures byin situdeposition of a Si3N4 surface layer

Published:2005-09 Issue:5 Volume:98 Page:054501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Derluyn J.,Boeykens S.,Cheng K.,Vandersmissen R.,Das J.,Ruythooren W.,Degroote S.,Leys M. R.,Germain M.,Borghs G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2008388

Reference17 articles.

1. J. Moon, S. Wu, D. Wong, I. Milosavljevic, P. Hashimoto, M. Hu, M. Antcliffe, and M. Micovoc, in GaN, AlN, InN and Their Alloys, edited by C. Wetzel, B. Gil, M. Kuzuhara, and M. Manfra, MRS Proceedings, Fall 2004, Boston, MA, 29 November–4 December 2004 (unpublished), Vol. 831, p. E6–1.

2. 12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate

3. 30-W/mm GaN HEMTs by Field Plate Optimization

4. Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

5. Proceedings of IEEE International Electron Device Meeting;Joshin K.

Cited by 187 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid-mechanics analysis and modeling of the alloyed ohmic contact proximity in GaN HEMTs using µRaman spectroscopy;Journal of Physics D: Applied Physics;2024-07-17

2. High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs;Journal of Electronic Materials;2024-05-03

3. Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure;Applied Physics Letters;2024-03-11

4. The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures;Materials Science and Engineering: B;2024-02

5. 1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer;IEEE Electron Device Letters;2024-01