1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer-Reference-Cited by-同舟云学术

1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer

Published:2024-01 Issue:1 Volume:45 Page:84-87
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Xiangdong¹^ORCID,Wang Junbo¹,Zhang Jincheng¹^ORCID,Han Zhanfei¹,You Shuzhen¹,Chen Long²^ORCID,Wang Lezhi²,Li Zilan²,Yang Weitao³,Chang Jingjing¹^ORCID,Liu Zhihong¹,Hao Yue¹^ORCID

Affiliation:

1. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, China

2. Guangdong Zhineng Technology Company Ltd., Guangzhou, China

3. China Southern Power Grid Technology Company Ltd., Guangzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10376160/10325497.pdf?arnumber=10325497

Reference20 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. GaN-Based RF Power Devices and Amplifiers

3. The 2018 GaN power electronics roadmap

4. GaN-on-Si Power Technology: Devices and Applications

5. 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

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2. Ultrathin-Body GaN-on-Sapphire HEMT With Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 10¹⁰ rad(Si)/s;IEEE Electron Device Letters;2024-08

3. Report of GaN HEMTs on 8-in Sapphire;IEEE Transactions on Electron Devices;2024-07

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5. High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 nm Ultra-Thin Buffer and Al₂O₃/SiO₂ Passivation;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02