p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics-Reference-Cited by-同舟云学术

p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics

Published:2024-07 Issue:7 Volume:45 Page:1257-1260
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Han Zhanfei¹,Li Xiangdong¹^ORCID,Ji Jian¹,Chen Long²^ORCID,Wang Lezhi²^ORCID,Cheng Zhibo¹,Yang Weitao³,You Shuzhen¹^ORCID,Li Zilan²,Hao Yue¹^ORCID,Zhang Jincheng¹^ORCID

Affiliation:

1. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, China

2. Guangdong Ziener Technology Company Ltd., Guangzhou, China

3. China, Southern Power Grid Technology Company Ltd., Guangzhou, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10530877.pdf?arnumber=10530877

Reference26 articles.

1. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

2. The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion

3. Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress

4. Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

5. Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment

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1. A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric;Micromachines;2024-08-02

2. Report of GaN HEMTs on 8-in Sapphire;IEEE Transactions on Electron Devices;2024-07