Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO[sub 2] Thin Films-Reference-Cited by-同舟云学术

Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO[sub 2] Thin Films

Published:2011 Issue:1 Volume:158 Page:H21
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Hyungchul,Woo Sanghyun,Lee Jaesang,Kim Yongchan,Lee Hyerin,Choi Ik-Jin,Kim Young-Do,Chung Chin-Wook,Jeon Hyeongtag

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

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2. M. Ritala and M. Leskela , inHandbook of Thin Film Materials, H. S. Nalwa , Editor, p. 103, Academic, San Diego (2002).

3. A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches

4. Alternative dielectrics to silicon dioxide for memory and logic devices

5. Atomic layer epitaxy

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