Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors-Reference-Cited by-同舟云学术

Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Published:2021-12-28 Issue: Volume: Page:2101731
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Legallais Maxime¹^ORCID,Lefevre Gauthier¹,Martin Simon²,Labau Sébastien¹,Bassani Franck¹,Pélissier Bernard¹,Baron Thierry¹,Vauche Laura²,Le Royer Cyrille²,Charles Matthew²,Vandendaele William²,Plissonnier Marc²,Gwoziecki Romain²,Salem Bassem¹^ORCID

Affiliation:

1. Univ. Grenoble Alpes CNRS, CEA/LETI Minatec, Grenoble INP, LTM Grenoble F‐38054 France

2. Univ. Grenoble Alpes CEA, LETI, MINATEC Campus Grenoble F‐38054 France

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202101731

Reference40 articles.

1. The 2018 GaN power electronics roadmap

2. Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

3. Consistent structural properties for AlN, GaN, and InN

4. Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

5. Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

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1. Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3;Journal of Applied Physics;2023-08-17

2. Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation;ACS Applied Electronic Materials;2022-07-12