Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method-Reference-Cited by-同舟云学术

Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method

Published:2023 Issue:4 Volume:11 Page:1298-1303
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Jae Chan¹,Choi Chang Ik¹,Lee Sang-Gil²,Yoo Seung Jo²,Lee Ji-Hyun²,Jang Jae Hyuck²,Kim Woo-Hee¹^ORCID,Ahn Ji-Hoon¹^ORCID,Kim Jeong Hwan³,Park Tae Joo¹^ORCID

Affiliation:

1. Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea

2. Center for Research Equipment, Korea Basic Science Institute, Daejeon 34133, Republic of Korea

3. Department of Materials Science and Engineering, Hanbat National University, Daejeon 34158, Republic of Korea

Abstract

A HfO2 film was grown using discrete feeding ALD, an advanced ALD process designed to improve the surface coverage of the precursor, which decreased the residual impurities in the film and increased the film density.

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC03485A

Reference34 articles.

1. Atomic Layer Deposition: An Overview

2. Growth Per Cycle in Atomic Layer Deposition: A Theoretical Model

3. AxBAxB… pulsed atomic layer deposition: Numerical growth model and experiments