Surface reaction kinetics in atomic layer deposition: An analytical model and experiments
Author:
Affiliation:
1. Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 1H9, Canada
Funder
Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
Alberta Innovates - Technology Futures
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5044456
Reference22 articles.
1. T. Muneshwar , M. Miao , E. R. Borujeny , and K. Cadien ,Handbook of Thin Film Deposition( Elsevier, 2018), pp. 359–377.
2. High dielectric constant gate oxides for metal oxide Si transistors
3. Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
4. Applications of atomic layer deposition to nanofabrication and emerging nanodevices
5. Atomic-scale simulation of ALD chemistry
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