Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm-Reference-Cited by-同舟云学术

Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm

Published:2023-01-30 Issue:3 Volume:35 Page:1107-1115
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Chou Chun-Yi¹^ORCID,Mo Chi-Lin¹,Chuu Chih-Piao²,Wang Ting-Yun¹^ORCID,Huang Chin-Chao¹^ORCID,Hou Cheng-Hung³,Chuang Chun-Ho¹,Jiang Yu-Sen¹,Shyue Jing-Jong¹³^ORCID,Chen Miin-Jang¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617 Taiwan, ROC

2. Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, 30844 Taiwan, ROC

3. Research Center for Applied Sciences, Academia Sinica, Taipei, 11529 Taiwan, ROC

Funder

Taiwan Semiconductor Manufacturing Company

National Science and Technology Council, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.2c03046

Reference38 articles.

1. Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

2. From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

3. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

4. Area-Selective Atomic Layer Deposition of Crystalline BaTiO3

5. Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation

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