Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors-Reference-Cited by-同舟云学术

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

Published:2022-03-08 Issue:10 Volume:126 Page:4845-4853
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Merkx Marc J. M.¹^ORCID,Angelidis Athanasios¹,Mameli Alfredo²^ORCID,Li Jun¹,Lemaire Paul C.³^ORCID,Sharma Kashish³,Hausmann Dennis M.³,Kessels Wilhelmus M. M.¹^ORCID,Sandoval Tania E.⁴^ORCID,Mackus Adriaan J. M.¹^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands

2. TNO-Holst Centre, 5656 AE Eindhoven, The Netherlands

3. Lam Research Corporation, Tualatin, Oregon 97062, United States

4. Department of Chemical and Environmental Engineering, Universidad Técnica Federico Santa María, 8940000 Santiago, Chile

Funder

H2020 European Research Council

Fondo Nacional de Desarrollo Cient?fico y Tecnol?gico

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c10816

Reference85 articles.

1. Perspective: New process technologies required for future devices and scaling

2. Feasibility study of fully self aligned vias for 5nm node BEOL

3. Gaining insight into effective metrology height through the use of a compact CDSEM model for lithography simulation

4. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

5. From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

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