Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor
Author:
Affiliation:
1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm100900k
Reference20 articles.
1. Atomic layer epitaxy
2. Atomic Layer Deposition: An Overview
3. Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar∕H2 plasma
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5. Monolayer thickness in atomic layer deposition
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