Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing-Reference-Cited by-同舟云学术

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Published:2020-08-10 Issue:35 Volume:12 Page:39870-39880
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Legallais Maxime¹^ORCID,Mehdi Hussein¹,David Sylvain¹,Bassani Franck¹^ORCID,Labau Sébastien¹,Pelissier Bernard¹,Baron Thierry¹,Martinez Eugenie²,Ghibaudo Gérard³,Salem Bassem¹^ORCID

Affiliation:

1. Université Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, F-38054 Grenoble, France

2. Université Grenoble Alpes, CEA/LETI, MINATEC Campus, F-38054 Grenoble, France

3. Université Grenoble Alpes, CNRS, Grenoble INP, IMEP-LAHC, 38000 Grenoble, France

Funder

Agence Nationale de la Recherche

Important Project of Common European Interest

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c10515

Reference54 articles.

1. Consistent structural properties for AlN, GaN, and InN

2. The 2018 GaN power electronics roadmap

3. Emergence of high quality sputtered III-nitride semiconductors and devices

4. Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

5. Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

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