Emergence of high quality sputtered III-nitride semiconductors and devices
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab3374/pdf
Reference157 articles.
1. Electrical and Optical Properties of rf‐Sputtered GaN and InN
2. Characterization of rf‐sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x‐ray precession method
3. Thin films of rf-magnetron sputtered InN on mica: Crystallography, electrical transport, and morphology
4. Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
5. Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
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