The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide-Reference-Cited by-同舟云学术

The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide

Published:2006 Issue:1 Volume:153 Page:G35
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Yong-Jin,Choi Chel-Jong,Jung Ran-Ju,Oh Soon-Young,Yun Jang-Gn,Lee Won-Jae,Ji Hee-Hwan,Wang Jin-Suk,Lee Hi-Deok

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Source—Drain contact resistance in CMOS with self-aligned TiSi2

2. Formation and stability of silicides on polycrystalline silicon

3. Salicidation process using NiSi and its device application

4. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

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