Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide-Reference-Cited by-同舟云学术

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Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

Published:2010-05-20 Issue:5 Volume:49 Page:055701
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhang Ying-Ying,Jung Soon-Yen,Oh Jungwoo,Shin Hong-Sik,Oh Se-Kyung,Wang Jin-Suk,Majhi Prashant,Jammy Raj,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference22 articles.

1. Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

2. Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: TiSi2, CoSi2, and NiSi

3. Metal Silicides in CMOS Technology: Past, Present, and Future Trends

4. Nickel-based contact metallization for SiGe MOSFETs: progress and challenges

5. The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The response of high barrier Schottky diodes to light illumination;Journal of Materials Science: Materials in Electronics;2021-01-15

2. Electrical and photoelectric properties of Yb/CIGS thin film Schottky photodiode;Sensors and Actuators A: Physical;2020-08

3. The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height;Applied Physics A;2020-06

4. Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs;Scientific Reports;2020-03-04

5. Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs;Japanese Journal of Applied Physics;2014-07-24

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