Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs-Reference-Cited by-同舟云学术

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Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

Published:2014-07-24 Issue:8S3 Volume:53 Page:08NE05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oh Sung-Kwen,Shin Hong-Sik,Li Meng,Lee Horyeong,Lee Ga-Won,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8S3/a=08NE05/pdf

Reference36 articles.

1. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

2. Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process

3. CoSi2 formation in the Ti/Co/SiO2/Si system

4. Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

5. Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved passivation effect in multicrystalline black silicon by chemical solution pre-treatment;Applied Physics A;2018-03-26

2. Impact of Standard Cleaning on Electrical and Optical Properties of Phosphorus-Doped Black Silicon;IEEE Journal of Photovoltaics;2018

3. Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs;Materials & Design;2017-01

4. Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3interfacial layer;Materials Research Express;2015-03-20

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