Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1372621
Reference13 articles.
1. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
2. A study of the leakage mechanisms of silicidedn+/pjunctions
3. A silicidation-induced process consideration for forming scale-down silicided junction
4. A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]
5. Growth of epitaxial CoSi2on (100)Si
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