Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs-Reference-Cited by-同舟云学术

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Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

Published:2010-12-31 Issue:4 Volume:10 Page:260-264
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Shin Hong-Sik,Oh Se-Kyung,Kang Min-Ho,Lee Ga-Won,Lee Hi-Deok

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201008863883988.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs;Japanese Journal of Applied Physics;2014-07-24

2. Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology;JSTS:Journal of Semiconductor Technology and Science;2013-06-30

3. Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology;Advanced Materials Research;2013-05

4. Investigation on Suppression of Nickel-Silicide Formation By Fluorocarbon Reactive Ion Etch (RIE) and Plasma-Enhanced Deposition;JSTS:Journal of Semiconductor Technology and Science;2013-02-28

5. Improvement of Heavy Dopant Doped Ni-Silicide Using Ytterbium Interlayer for Nano-Scale MOSFETs with an Ultra Shallow Junction;Journal of Nanoscience and Nanotechnology;2011-07-01

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