Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology-Reference-Cited by-同舟云学术

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Published:2013-05 Issue: Volume:699 Page:817-821
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Li Meng¹,Oh Sung Kwen¹,Shin Hong Sik¹,Lee Hi Deok¹

Affiliation:

1. Chungnam National University

Abstract

In this paper, Ni-silicide formed by co-sputtering of Ni and Ti on a boron cluster (BF2, B18H22) implanted ultra-shallow source/drain for MOSFET (metal oxide semiconductor field effect transistor) is proposed. Ni and Ti with a TiN capping layer were deposited by co-sputtering on boron cluster implanted wafer. By analysis of its sheet resistance, interfacial structures, surface morphological stability, and phase formation after post-silicidation annealing, thermal stability of Ni-silicide was found to be improved a lot.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.699.817.pdf

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