Source—Drain contact resistance in CMOS with self-aligned TiSi2-Reference-Cited by-同舟云学术

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Source—Drain contact resistance in CMOS with self-aligned TiSi2

Published:1987-03 Issue:3 Volume:34 Page:575-580
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yuan Taur ,Sun J.Y.-C.,Moy D.,Wang L.K.,Davari B.,Klepner S.P.,Chung-Yu Ting

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31975/01486676.pdf?arnumber=1486676

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