The Hot-Cold Effect on Optical Properties for Nitride-Based Green LEDs by Ammonia Source Preflow
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
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4. Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits
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1. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives;Journal of Applied Physics;2020-06-07
2. Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties;SPIE Proceedings;2016-03-08
3. Role of defects in the thermal droop of InGaN-based light emitting diodes;Journal of Applied Physics;2016-03-07
4. Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10- $\mu \text{m}$ -Thick n-GaN Template;IEEE Electron Device Letters;2015-11
5. Enabling High-Injection Current Light-Emitting Diodes Prepared on 10-$\mu \text{m}$ -Thick GaN Films Grown by Hydride Vapor Phase Epitaxy;IEEE Transactions on Electron Devices;2015-09
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