Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties
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SPIE
Reference24 articles.
1. Auger recombination in InGaN measured by photoluminescence
2. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
3. Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
4. Figures from commercially-available LED datasheets: Cree XREROY, LedEngin LZ4-00B210, Lumileds LXML-PR01, Osram LD W5SM, Seoul Semiconductor D42180.
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