Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3171928
Reference15 articles.
1. Nitride Semiconductors
2. High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer
3. Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile
4. Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment
5. Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands
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