Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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3. Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire;Korean Journal of Materials Research;2018-04-30
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