Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress-Reference-Cited by-同舟云学术

Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress

Published:2024-09-13 Issue: Volume: Page:
ISSN:1547-7029
Container-title:Journal of Failure Analysis and Prevention
language:en
Short-container-title:J Fail. Anal. and Preven.

Author:

Ghizzo Lucien,Guibaud Gérald,De Nardi Christophe,Jamin François,Chazal Vanessa,Trémouilles David,Monflier Richard,Richardeau Frédéric,Bascoul Guillaume,González Sentís Manuel

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11668-024-02038-x.pdf

Reference16 articles.

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3. X. Cai et al., Recent progress of physical failure analysis of GaN HEMTs. J. Semicond. 42, 051801 (2021). https://doi.org/10.1088/1674-4926/42/5/051801

4. R.L. Torrisi et al., Failure Analysis of AlGaN/GaN Power HEMTs through an innovative sample preparation approach. in 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, pp. P19-1–P19-5. (2022). https://doi.org/10.1109/IRPS48227.2022.9764513

5. T. Colpaert et al, Fast and effective sample preparation technique for backside fault isolation on GaN packaged devices. in ISTFA 2021. (2021). https://doi.org/10.31399/asm.cp.istfa2021p079