Reliability and failure analysis in power GaN-HEMTs: An overview-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Reliability and failure analysis in power GaN-HEMTs: An overview

Published:2017-04 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Reliability Physics Symposium (IRPS)
language:
Short-container-title:

Author:

Meneghini Matteo,Rossetto Isabella,De Santi Carlo,Rampazzo Fabiana,Tajalli Alaleh,Barbato Alessandro,Ruzzarin Maria,Borga Matteo,Canato Eleonora,Zanoni Enrico,Meneghesso Gaudenzio

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7932684/7936242/07936282.pdf?arnumber=7936282

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Detailed Analytical Switching Transient Model for Silicon Superjunction MOSFET and SiC Schottky Diode Pair;IEEE Transactions on Power Electronics;2024-10

2. Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress;Journal of Failure Analysis and Prevention;2024-09-13

3. Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2024-09

4. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07

5. DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer;Physica Scripta;2024-06-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP