Role of defects in the thermal droop of InGaN-based light emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4942438
Reference89 articles.
1. Auger recombination in InGaN measured by photoluminescence
2. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
3. Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
4. Effects of Temperature on InGaN/GaN LEDs with Different MQW Structures
5. Thermal analysis and characterization of the effect of substrate thinning on the peformances of GaN-based light emitting diodes
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