Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives-Reference-Cited by-同舟云学术

Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

Published:2020-06-07 Issue:21 Volume:127 Page:211102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Meneghini Matteo¹^ORCID,De Santi Carlo¹^ORCID,Tibaldi Alberto²³^ORCID,Vallone Marco²^ORCID,Bertazzi Francesco²³^ORCID,Meneghesso Gaudenzio¹^ORCID,Zanoni Enrico¹^ORCID,Goano Michele²³^ORCID

Affiliation:

1. Department of Information Engineering, University of Padova, via Gradenigo 6/b, 35131 Padova, Italy

2. Department of Electronics and Telecommunications, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Turin, Italy

3. Consiglio Nazionale delle Ricerche (CNR), Istituto di Elettronica e di Ingegneria dell'Informazione e delle Telecomunicazioni (IEIIT), corso Duca degli Abruzzi 24, 10129 Turin, Italy

Funder

Italian Ministry of Research, University and Education

US Army Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0005874

Reference168 articles.

1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

2. Review—The Physics of Recombinations in III-Nitride Emitters