Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors-Reference-Cited by-同舟云学术

Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

Published:2017-03 Issue:3 Volume:7 Page:035321
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yu Jiadong¹,Hao Zhibiao¹^ORCID,Li Linsen¹,Wang Lai¹^ORCID,Luo Yi¹,Wang Jian¹,Sun Changzheng¹,Han Yanjun¹,Xiong Bing¹,Li Hongtao¹

Affiliation:

1. Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979504

Reference43 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

4. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

5. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

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