Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence
Author:
Affiliation:
1. Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Station3 CH-1015, Switzerland
Funder
EPFL Fellowship Program Co-funded by Marie Curie
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (SNF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959832
Reference24 articles.
1. The efficiency challenge of nitride light-emitting diodes for lighting
2. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. Prospects for LED lighting
5. Efficiency droop in light-emitting diodes: Challenges and countermeasures
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