On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si:P Epitaxial Films for Source-Drain Stressor Applications-Reference-Cited by-同舟云学术

On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si:P Epitaxial Films for Source-Drain Stressor Applications

Published:2018 Issue:5 Volume:7 Page:P228-P237
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Dhayalan Sathish kumar^ORCID,Kujala Jiri,Slotte Jonatan,Pourtois Geoffrey,Simoen Eddy,Rosseel Erik,Hikavyy Andriy,Shimura Yosuke,Loo Roger^ORCID,Vandervorst Wilfried

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

1. (Invited) Monolithic Integration of III-V Semiconductors by Selective Area Growth on Si(001) Substrate: Epitaxy Challenges & Applications

2. Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

3. Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors

4. Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

5. Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices

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3. Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx;ECS Journal of Solid State Science and Technology;2020-01-05

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