Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content-Reference-Cited by-同舟云学术

Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Published:2008-09 Issue:9 Volume:55 Page:2475-2483
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tsung-Yang Liow ,Kian-Ming Tan ,Weeks D.,Rinus Lee ,Ming Zhu ,Keat-Mun Hoe ,Chih-Hang Tung ,Bauer M.,Spear J.,Thomas S.G.,Samudra G.S.,Balasubramanian N.,Yee-Chia Yeo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4603161/04603174.pdf?arnumber=4603174

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