Author:
Merckling Clement,Jiang Sijia,Liu Ziyang,Waldron Niamh,Boccardi G,Rooyackers R,Wang Zhechao,Tian Bin,Pantouvaki Marianna,Collaert Nadine,Van Campenhout Joris,Heyns Marc,Van Thourhout Dries,Vandervorst Wilfried,Thean Aaron
Abstract
This study relates to the selective area growth (SAG) of III-V semiconductors on Silicon substrates. Both approaches, growth in trenches and NWs bottom-up growth, are considered and discussed. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width below 20 nm. First GaAs NWs from production MOVPE tool are also shown in a second part. Finally we conclude with the different applications using III-V semiconductors successfully integrated on Silicon substrates.
Publisher
The Electrochemical Society
Cited by
4 articles.
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