Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor-Reference-Cited by-同舟云学术

Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor

Published:2016 Issue:7 Volume:5 Page:P409-P411
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Cho Young-Dae,Lee In-Geun,Lee Joo-Hee,Kim Sun-Wook,Shin Chan-Soo,Park Won-Kyu,Kim Chung-Yi,Kim Dae-Hyun,Ko Dae-Hong

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference24 articles.

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2. Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces

3. Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

4. Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

5. Yuan Z. Kumar A. Chen C.-Y. Nainani A. Griffin P. Wang A. Wang W. Wong M. H. Droopad R. Contreras-Guerrero R. Kirsch P. Jammy R. Plummer J. Saraswat K. , VLSI Tech. Digest, pp. T54 (2013).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy;Journal of the Korean Physical Society;2020-10

2. Selective Epitaxial Growth of GaAs on a Si (001) Surface Formed by an In Situ Bake in a Metal-Organic Chemical Vapor Deposition Reactor;Journal of Nanoscience and Nanotechnology;2017-05-01