Selective Epitaxial Growth of GaAs on a Si (001) Surface Formed by an In Situ Bake in a Metal-Organic Chemical Vapor Deposition Reactor-Reference-Cited by-同舟云学术

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Selective Epitaxial Growth of GaAs on a Si (001) Surface Formed by an In Situ Bake in a Metal-Organic Chemical Vapor Deposition Reactor

Published:2017-05-01 Issue:5 Volume:17 Page:3242-3246
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Cho Young-Dae¹,Lee In-Geun¹,Jung Mi-Jin¹,Shin Hyunsu¹,Jun Dong-Hwan²,Shin Chan-Soo²,Park Kyung-Ho²,Park Won-Kyu²,Kim Dae-Hyun³,Ko Dae-Hong¹

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

2. Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-270, Korea

3. School of Electronics Engineering College of IT Engineering, Kyungpook National University, Dague 702-701, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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