Selective Epitaxial Growth of GaAs on a Si (001) Surface Formed by an In Situ Bake in a Metal-Organic Chemical Vapor Deposition Reactor

Author:

Cho Young-Dae1,Lee In-Geun1,Jung Mi-Jin1,Shin Hyunsu1,Jun Dong-Hwan2,Shin Chan-Soo2,Park Kyung-Ho2,Park Won-Kyu2,Kim Dae-Hyun3,Ko Dae-Hong1

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

2. Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-270, Korea

3. School of Electronics Engineering College of IT Engineering, Kyungpook National University, Dague 702-701, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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