Dopant-defect interactions in highly doped epitaxial Si:P thin films

Author:

Weinrich Z.N.ORCID,Li X.,Sharma S.,Craciun V.,Ahmed M.,Sanchez E.A.C.,Moffatt S.,Jones K.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET;Ni,2015

2. Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes;Ni,2016

3. High tensile strained in-situ phosphorus doped silicon epitaxial film for nMOS applications;Ye;ECS Trans.,2013

4. Selective epitaxial Si:P film for nMOSFET application: high phosphorous concentration and high tensile strain;Li;ECS Trans.,2014

5. On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films;Dhayalan;Appl. Phys. Lett.,2016

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