On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films-Reference-Cited by-同舟云学术

On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Published:2016-02-22 Issue:8 Volume:108 Page:082106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dhayalan Sathish Kumar¹²^ORCID,Kujala Jiri³,Slotte Jonatan³^ORCID,Pourtois Geoffrey²,Simoen Eddy²,Rosseel Erik²,Hikavyy Andriy²,Shimura Yosuke¹²,Iacovo Serena¹,Stesmans Andre¹,Loo Roger²,Vandervorst Wilfried¹²

Affiliation:

1. Department of Physics, Celestijnenlaan 200D, 3001 Heverlee, Belgium

2. IMEC vzw, Kapeldreef 75, 3001 Heverlee, Belgium

3. Department of Applied Physics, Aalto University, P.O. Box 14100, FI-00076 Aalto, Finland

Funder

FWO pegasus marie curie post doctoral fellowship

Logic program of imec and core partners

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942605

Reference21 articles.

1. Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/ for high performance pFETs.

2. Strain Enhanced nMOS Using In Situ Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process

3. Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

4. Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors

5. High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications

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