Application of the Stribeck+ Curve in Silicon Dioxide Chemical Mechanical Planarization-Reference-Cited by-同舟云学术

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Application of the Stribeck+ Curve in Silicon Dioxide Chemical Mechanical Planarization

Published:2017 Issue:4 Volume:6 Page:P161-P164
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Han Ruochen,Sampurno Yasa,Theng Siannie,Sudargho Fransisca,Zhuang Yun,Philipossian Ara

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Physics and tribology of chemical mechanical planarization

2. The effect of slurry viscosity on chemical–mechanical polishing of silicon wafers

3. Determining the Effects of Slurry Surfactant, Abrasive Size, and Abrasive Content on the Tribology and Kinetics of Copper CMP

4. Chemical boundary lubrication in chemical–mechanical planarization

5. Analysis of Scratches Formed on Oxide Surface during Chemical Mechanical Planarization

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Shear Force Law: A Guide to Modeling CMP Removal Rates;ECS Journal of Solid State Science and Technology;2023-04-01

2. A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization;Journal of Materials Research;2021-01-15

3. Tribological, Thermal, Kinetic, and Pad Micro-Textural Studies Using Polyphenylene Sulfide Retaining Rings in Interlayer Dielectric Chemical Mechanical Planarization;ECS Journal of Solid State Science and Technology;2020-12-01

4. Synergy between dodecylbenzenesulfonic acid and isomeric alcohol polyoxyethylene ether for nano-scale scratch reduction in copper chemical mechanical polishing;Tribology International;2020-12

5. Tribological, Thermal and Kinetic Characterization of SiO2 and Si3N4 Polishing for STI CMP on Blanket and Patterned Wafers;ECS Journal of Solid State Science and Technology;2020-05-04

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