Tribological, Thermal and Kinetic Characterization of SiO2 and Si3N4 Polishing for STI CMP on Blanket and Patterned Wafers
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ab89bc/pdf
Reference64 articles.
1. Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
2. A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO2 Slurry
3. Material Removal Mechanisms of Oxide and Nitride CMP with Ceria and Silica-Based Slurries - Analysis of Slurry Particles Pre- and Post-Dielectric CMP
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