Analysis of Scratches Formed on Oxide Surface during Chemical Mechanical Planarization-Reference-Cited by-同舟云学术

Analysis of Scratches Formed on Oxide Surface during Chemical Mechanical Planarization

Published:2010 Issue:2 Volume:157 Page:H186
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Choi Jae-Gon,Prasad Y. Nagendra,Kim In-Kwon,Kim In-Gon,Kim Woo-Jin,Busnaina Ahmed A.,Park Jin-Goo

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Y. Li ,Microelectronic Applications of Chemical Mechanical Planarization, John Wiley & Sons, Somerset, NJ (2008).

2. Effects of slurry filter size on the chemical mechanical polishing (CMP) defect density

3. Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries

4. Chemical mechanical polishing defect reduction via a plasma etch in the 0.15 μm shallow trench isolation process

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