Printability of buried extreme ultraviolet lithography photomask defects-Reference-Cited by-同舟云学术

Printability of buried extreme ultraviolet lithography photomask defects

Published:2016-02-01 Issue:2 Volume:15 Page:021004
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Seki Kazunori¹,Isogawa Takeshi¹,Kagawa Masayuki¹,Akima Shinji¹,Kodera Yutaka²,Badger Karen³,Qi Zhengqing John⁴,Lawliss Mark³,Rankin Jed³,Bonam Ravi⁵

Affiliation:

1. Toppan Photomasks Inc., 1000 River Street, Essex Junction, Vermont 05452, United States

2. Toppan Printing Co., Ltd., 21-33 Nobidome 7-Chome, Niiza-shi, Saitama 352-8562, Japan

3. GlobalFoundries Inc., 1000 River Street, Essex Junction, Vermont 05452, United States

4. GlobalFoundries Inc., 257 Fuller Road, Albany Nanotech, Albany, New York 12203, United States

5. IBM Research, 257 Fuller Road, Albany Nanotech, Albany, New York 12203, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Shedding light on EUV mask inspection

2. Illuminating EUVL mask defect printability

3. Evaluation of non-actinic EUV mask inspection and defect printability on multiple EUV mask absorbers

4. Reflecting on inspectability and wafer printability of multiple EUV mask absorbers

5. Illuminating extreme ultraviolet lithography mask defect printability

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1. Towards ultimate image placement accuracy for EUV mask writing with pattern shift process;Extreme Ultraviolet (EUV) Lithography X;2019-03-26

2. Overcoming EUV mask blank defects: what we can, and what we should;SPIE Proceedings;2017-07-13

3. EUV mask defectivity – a process of increasing control toward HVM;Advanced Optical Technologies;2017-01-01

4. Phase-independent multilayer defect repair for EUV photomasks;SPIE Proceedings;2016-10-04

5. Defect avoidance for EUV photomask readiness at the 7 nm node;SPIE Proceedings;2016-05-10