Overcoming EUV mask blank defects: what we can, and what we should-Reference-Cited by-同舟云学术

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Overcoming EUV mask blank defects: what we can, and what we should

Published:2017-07-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Jonckheere Rik¹

Affiliation:

1. IMEC (Belgium)

Publisher

SPIE

Reference26 articles.

1. Steering Committee of the EUV Lithography Symposium 2016, closing address.

2. Mask defect printability in Full Field EUV Lithography - Part 2;Jonckheere,2008

3. Investigation of Mask Defect Density in Full-Field EUV Lithography;Jonckheere,2009

4. Investigation of EUV mask defectivity via full-field printing and inspection on wafer;Jonckheere,2009

5. EUV exposure experiment using programmed multilayer defects for refining printability simulation;Tezuka,2007

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1. Inverse analysis of multilayer defects in EUV mask from the perspective of imaging performance;Optical and EUV Nanolithography XXXVII;2024-04-10

2. 极紫外光刻中的边缘放置误差控制;Chinese Journal of Lasers;2024

3. Comprehensive extreme ultraviolet blank defect avoidance system;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

4. Through-focus EUV multilayer defect compensation considering optical proximity correction;Applied Optics;2022-05-16

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