Illumination pupil optimization in 0.33-NA extreme ultraviolet lithography by intensity balancing for semi-isolated dark field two-bar M1 building blocks-Reference-Cited by-同舟云学术

Illumination pupil optimization in 0.33-NA extreme ultraviolet lithography by intensity balancing for semi-isolated dark field two-bar M1 building blocks

Published:2016-11-30 Issue:4 Volume:15 Page:043508
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Last Thorsten¹,de Winter Laurens¹,van Adrichem Paul¹,Finders Jo¹

Affiliation:

1. ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Mitigation of mask three-dimensional induced phase effects by absorber optimization in ArFiand extreme ultraviolet lithography

2. Imaging enhancement by reduction of mask topography induced phase aberrations for horizontal 1D spaces under D90Y illumination

3. Mask 3D induced phase and the mitigation by absorber optimization

4. Understanding the litho-impact of phase due to 3D mask effects when using off-axis illumination

5. Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks

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